Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

被引：18

作者：

Kudrawiec, R. ^{[1
]}

Janicki, L. ^{[1
]}

Gladysiewicz, M. ^{[1
]}

Misiewicz, J. ^{[1
]}

Cywinski, G. ^{[2
]}

Bockowski, M. ^{[2
]}

Muziol, G. ^{[2
]}

Cheze, C. ^{[3
]}

Sawicka, M. ^{[2
,3
]}

Skierbiszewski, C. ^{[2
,3
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[3] TopGaN Sp Zoo, PL-01142 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 05期

关键词：

ELECTRONIC-STRUCTURE; FIELD; WELL; ENERGY; POLAR;

D O I：

10.1063/1.4817296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two series of N- and Ga-face GaN Van Hoof structures were grown by plasma-assisted molecular beam epitaxy to study the surface potential barrier by contactless electroreflectance (CER). A clear CER resonance followed by strong Franz-Keldysh oscillation of period varying with the thickness of undoped GaN layer was observed for these structures. This period was much shorter for N-polar structures that means smaller surface potential barrier in these structures than in Ga-polar structures. From the analysis of built-in electric field it was determined that the Fermi-level is located 0.27 +/- 60.05 and 0.60 +/- 60.05 eV below the conduction band for N- and Ga-face GaN surface, respectively. (C) 2013 AIP Publishing LLC.

引用

页数：4

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