PIEZOELECTRIC PROPERTIES OF ScAlN THIN FILMS FOR PIEZO-MEMS DEVICES

被引：0
|
作者：
Umeda, Keiichi [1 ]
Kawai, H. [1 ]
Honda, A. [1 ]
Akiyama, M. [2 ]
Kato, T. [1 ]
Fukura, T. [1 ]
机构：
[1] Murata Mfg Co Ltd, Osaka, Japan
[2] Natl Inst Adv Ind Sci & Technol, Osaka, Japan
来源：
26TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2013) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports the piezoelectric properties of ScAlN thin films. We evaluated the piezoelectric coefficients d(33) and d(31) of ScxAl1-xN thin films directly deposited onto silicon wafers, as well the radio frequency (RF) electrical characteristics of Sc0.35Al0.65N bulk acoustic wave (BAW) resonators at around 2 GHz, and found a maximum value for d(33) of 28 pC/N and a maximum -d(31) of 13 pm/V at 40% scandium concentration. In BAW resonators that use Sc0.35Al0.65N as a piezoelectric film, the electromechanical coupling coefficient k(2) (= 15.5%) was found to be 2.6 times that of resonators with AlN films. These experimental results are in very close agreement with first-principles calculations. The large electromechanical coupling coefficient and high sound velocity of these films should make them suitable for high frequency applications.
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页码：733 / 736
页数：4
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