Unraveling Quantum Hall Breakdown in Bilayer Graphene with Scanning Gate Microscopy

被引:40
|
作者
Connolly, M. R. [1 ,2 ]
Puddy, R. K. [1 ]
Logoteta, D. [3 ]
Marconcini, P. [3 ]
Roy, M. [4 ]
Griffiths, J. P. [1 ]
Jones, G. A. C. [1 ]
Maksym, P. A. [4 ]
Macucci, M. [3 ]
Smith, C. G. [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England
[2] Natl Phys Lab, Teddington TW11 0LW, Middx, England
[3] Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, Italy
[4] Univ Leicester, Dept Phys & Astron, Leicester LE1 7RH, Leics, England
基金
英国工程与自然科学研究理事会;
关键词
Graphene; scanning gate microscopy; quantum Hall effect; resistance metrology; quantum percolation; LOCALIZATION; PHASE; FLUCTUATIONS; MODELS;
D O I
10.1021/nl3015395
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Investigating the structure of quantized plateaus, in the Hall conductance of graphene is a powerful way of probing its crystalline and electronic structure and will also help to establish whether graphene can be used as a robust standard of resistance for quantum metrology We use low temperature scanning gate microscopy to image the interplateau breakdown of the quantum Hall effect in an exfoliated bilayer graphene flake. Scanning gate images captured during breakdown exhibit intricate patterns where the conductance is strongly affected by the presence of the scanning probe tip. The maximum density and intensity of the tip induced conductance perturbations occur at half integer filling factors, midway between consecutive quantum Hall plateau, while the intensity of individual sites shows a strong dependence on tip voltage Our results are well described by a model based on quantum percolation which relates the points of high responsivity to tip-induced scattering in a network of saddle points separating localized states.
引用
收藏
页码:5448 / 5454
页数:7
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