Effects of neutron irradiation of ultra-thin HfO2 films

被引：3
|
作者：
Hsu, K-W. [1 ,2 ]
Ren, H. [3 ]
Agasie, R. J. [4 ]
Bian, S. [1 ,2 ]
Nishi, Y. [5 ]
Shohet, J. L. [1 ,2 ]
机构：
[1] Univ Wisconsin, Plasma Proc & Technol Lab, Madison, WI 53706 USA
[2] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[3] Appl Mat Inc, Sunnyvale, CA 94085 USA
[4] Univ Wisconsin, Dept Engn Phys, Madison, WI 53706 USA
[5] Stanford Univ, Stanford, CA 94305 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 03期
基金：
美国国家科学基金会;
关键词：
ELECTRON-SPIN RESONANCE; RADIATION-DAMAGE; CENTERS; SILICON; LAYERS;
D O I：
10.1063/1.4863222
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Neutron irradiation at low fluence decreases the Pb-type and E' defect levels in ultra-thin hafnium dioxide films because electrons can fill existing states. These electrons come from electron-hole pairs generated by neutron interactions with silicon and oxygen. Thus, a low fluence of neutrons "anneals" the sample. However, when neutron fluence increases, more neutrons collide with oxygen atoms and cause them to leave the lattice or to transmute into different atoms. This causes the E' states to increase. As defect-state concentrations increase, leakage currents increase, but since the E' is much lower than the Pb concentration, this is not a dominant factor. (C) 2014 AIP Publishing LLC.
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页数：3
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