An intense red-emitting phosphor Ca3Gd7(SiO4)5(PO4)O2:Eu3+ for NUV-LEDs application

被引：29

作者：

Zhang, Feng ^{[1
,2
]}

Liu, Bitao ^{[3
]}

机构：

[1] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475001, Peoples R China

[2] Henan Univ, Sch Phys & Elect, Kaifeng 475001, Peoples R China

[3] Lanzhou Univ, Sch Phys Sci & Technol, Dept Mat Sci, Lanzhou 730000, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 542卷

关键词：

Photoluminescence; Phosphors; LEDs; ENERGY-TRANSFER; WHITE LEDS; NEAR-UV; PHOTOLUMINESCENCE; DIODES; LN; LA; TB; EU; GD;

D O I：

10.1016/j.jallcom.2012.07.084

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The red-emitting phosphors Ca3Gd7(SiO4)(5)(PO4)O-2:Eu3+ were synthesized and their photoluminescence properties under near-ultraviolet (NUV) light excitation were investigated. The results indicate that Ca3Gd7(SiO4)(5)(PO4)O-2:Eu3+ can be effectively excited by 393 nm which matches with the emission wavelength of NUV chips for white light emitting diodes (LED). These phosphors present an intensity red emission with maximum at 614 nm. Among them, the optimal sample has high emission intensity and exhibits small thermal-quenching property, which indicates that it can be potentially applied in NUV InGaN-based LEDs. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：276 / 279

页数：4

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