X-ray enhanced sputter rates in argon cluster ion sputter-depth profiling of polymersa)

被引:19
|
作者
Cumpson, Peter J. [1 ]
Portoles, Jose F. [1 ]
Sano, Naoko [1 ]
Barlow, Anders J. [1 ]
机构
[1] Newcastle Univ, Sch Mech & Syst Engn, Natl EPSRC XPS Users Serv NEXUS, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
来源
基金
英国工程与自然科学研究理事会;
关键词
DEGRADATION;
D O I
10.1116/1.4793284
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors have observed for the first time that x-ray exposure of certain polymers of "degrading" type can greatly enhance the sputter rate of these polymers by gas cluster ion beam (GCIB) profiling. They have observed craters of similar dimensions to the x-ray spot well within the perimeter of sputter craters, indicating that x-rays can assist GCIB sputtering very significantly. This can be a major source of the loss of depth-resolution in sputter depth profiles of polymers. The authors have measured experimentally sputter craters in 14 different polymers by white-light interferometry. The results show that x-ray exposure can introduce much more topography than might previously have been expected, through both thermal and direct x-ray degradation and cross-linking. Within the region exposed to x-rays, the response of the polymer surface depends on its chemistry, with degrading (also known as type II) polymers being susceptible to large increases in sputter rate in some cases. For example, this leads to a sputter rate increase of a factor of 3 in poly-L-lactic acid (PLLA) compared to cluster-ion sputtering in the absence of x rays under typical experimental conditions. By comparison, crosslinking (also known as type I) polymers show either the same sputter rate or a reduced sputter rate due to crosslinking. The authors model this behavior using the bond scission parameter (G(S)) and crosslinking parameter (G(X)) used to model radiation damage in polymers. Agreement is good, allowing us to provide guidelines to assist in planning XPS depth-profiling experiments, in particular, for polymers such as PMMA and PLLA, where any requirement for uniform sputter rate is a more stringent limit to x-ray exposure than the requirement for the XPS spectra to represent chemical states quantitatively without damage. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4793284]
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Observations on X-ray enhanced sputter rates in argon cluster ion sputter depth profiling of polymers
    Cumpson, Peter J.
    Portoles, Jose F.
    Sano, Naoko
    [J]. SURFACE AND INTERFACE ANALYSIS, 2013, 45 (02) : 601 - 604
  • [2] Practical guides for x-ray photoelectron spectroscopy: Use of argon ion beams for sputter depth profiling and cleaning
    Shard, Alexander G.
    Baker, Mark A.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024, 42 (05):
  • [3] Accurate argon cluster-ion sputter yields: Measured yields and effect of the sputter threshold in practical depth-profiling by x-ray photoelectron spectroscopy and secondary ion mass spectrometry
    Cumpson, Peter J.
    Portoles, Jose F.
    Barlow, Anders J.
    Sano, Naoko
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (12)
  • [4] Viscoelastic relaxation and sputter-depth profiling of amorphous materials
    Carter, G
    [J]. SURFACE AND INTERFACE ANALYSIS, 1997, 25 (01) : 36 - 40
  • [5] Sputter-depth profiling for thin-film analysis
    Hofmann, S
    [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2004, 362 (1814): : 55 - 75
  • [6] SPUTTER-DEPTH PROFILING IN AES - DEPENDENCE OF DEPTH RESOLUTION ON ELECTRON AND ION-BEAM GEOMETRY
    DUNCAN, S
    SMITH, R
    SYKES, DE
    WALLS, JM
    [J]. SURFACE AND INTERFACE ANALYSIS, 1983, 5 (02) : 71 - 76
  • [7] IMPROVED SPUTTER-DEPTH PROFILES USING 2 ION GUNS
    SYKES, DE
    HALL, DD
    THURSTANS, RE
    WALLS, JM
    [J]. APPLIED SURFACE SCIENCE, 1980, 5 (01) : 103 - 106
  • [8] Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry
    Seah, Martin P.
    Havelund, Rasmus
    Gilmore, Ian S.
    [J]. JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY, 2016, 27 (08) : 1411 - 1418
  • [9] INFLUENCE OF ION MIXING ON THE DEPTH RESOLUTION OF SPUTTER DEPTH PROFILING
    CHENG, YT
    DOW, AA
    CLEMENS, BM
    CIRLIN, EH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1641 - 1645
  • [10] EFFECT OF ION MIXING ON THE DEPTH RESOLUTION OF SPUTTER DEPTH PROFILING
    CHENG, YT
    DOW, AA
    CLEMENS, BM
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (14) : 1346 - 1348