Development of Medium Voltage Solid-State Fault Isolation Devices for Ultra-Fast Protection of Distribution Systems

被引：0

作者：

Peng, Chang ^{[1
]}

Song, Xiaoqing

Rezaei, Mohammad Ali

Huang, Xing

Widener, Chris

Huang, Alex Q.

Steurer, Michael

机构：

[1] North Carolina State Univ, FREEDM Syst Ctr, Raleigh, NC 27695 USA

来源：

IECON 2014 - 40TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY | 2014年

关键词：

fault isolation device; solid state circuit breaker; hybrid circuit breaker; SiC device; Emitter turn off thyristor; distribution system protection; POSITIVE-BEVEL TERMINATION; PARALLEL OPERATION; ETO; DIODES;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Three generations of medium voltage fault isolation devices (FID) for a power electronics based distribution system, the FREEDM System, are reported in this paper. In the Gen-I FID, three 6.5 kV silicon IGBTs are series connected to achieve 15 kV class distribution voltage blocking capability. Whereas in the Gen-II and the Gen-III FIDs, 15 kV Silicon Carbide (SiC) ETO devices are used. Since one single such device can meet the voltage withstand requirement, the operation losses as well as dimensions are significantly reduced. Future improvements in the Gen-III FID include the use of hybrid schemes and the development of symmetrical blocking high voltage SiC devices to further minimize the operation losses.

引用

页码：5169 / 5176

页数：8

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