Growth and Characterization of InAs1-xSbx with Different Sb Compositions on GaAs Substrates

被引：5
|
作者：
Sun Qing-Ling [1 ,2 ,3 ]
Wang Lu [1 ,2 ,3 ,4 ]
Wang Wen-Qi [1 ,2 ,3 ]
Sun Ling [1 ,2 ,3 ]
Li Mei-Cheng [4 ]
Wang Wen-Xin [1 ,2 ,3 ]
Jia Hai-Qiang [1 ,2 ,3 ]
Zhou Jun-Ming [1 ,2 ,3 ]
Chen Hong [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Key Lab Renewable Energy, Inst Phys, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condense Matter Phys, Beijing 100190, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[4] North China Elect Power Univ, Sch Renewable Energy, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2015年 / 32卷 / 10期
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
MOLECULAR-BEAM EPITAXY; ROOM-TEMPERATURE; OPTICAL CHARACTERIZATION; SURFACE-MORPHOLOGY; STRAIN RELAXATION; INASSB; GASB; PHOTODETECTORS; TRANSPORT; DETECTOR;
D O I：
10.1088/0256-307X/32/10/106801
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
InAs1-xSbx with different compositions is grown by molecular beam epitaxy on (100)-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.
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页数：4
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