Influence of Barrier and Doping Type on the Open-Circuit Voltage of Liquid Phase-Crystallized Silicon Thin-Film Solar Cells on Glass

被引：22

作者：

Haschke, Jan ^{[1
]}

Amkreutz, Daniel ^{[1
]}

Frijnts, Tim ^{[2
]}

Kuehnapfel, Sven ^{[1
]}

Haenel, Tobias ^{[2
]}

Rech, Bernd ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin GmbH, Inst Silicon Photovolta, D-12489 Berlin, Germany

[2] Helmholtz Zentrum Berlin GmbH, PVcomB, D-12489 Berlin, Germany

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2015年 / 5卷 / 04期

关键词：

FrontERA; heterojunction; high absorber doping; laser beam-induced current (LBIC); multicrystalline; polycrystalline; MULTICRYSTALLINE SILICON; SI-SIO2; INTERFACE; RECOMBINATION; INTERMEDIATE; LAYERS; PASSIVATION; EFFICIENCY; LEVEL;

D O I：

10.1109/JPHOTOV.2015.2412453

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We investigate the influence of the barrier type and the absorber doping on the open-circuit voltage of liquid phase-crystallized silicon solar cells on glass. It was found that the use of n-type instead of p-type substrates is the major reason for the recently reported boost of the open-circuit voltage (V-OC) up to values of 656 mV, which is by far exceeding the previously reported V-OC values of crystalline silicon solar cells on glass. Despite the high doping, locally, an internal quantum efficiency of 90% can be achieved. Therewith, efficiencies of 16% and up should be possible.

引用

页码：1001 / 1005

页数：5

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