Stability of III-V semiconductor materials under different environmental conditions

被引：0
|
作者：
Ivanisevic, Albena [1 ]
机构：
[1] N Carolina State Univ, Raleigh, NC 27695 USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 243卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
65-GEOC
引用
收藏
页数：1
相关论文
共 50 条
  • [1] III-V SEMICONDUCTOR MICROCLUSTERS - STRUCTURES, STABILITY, AND MELTING
    ANDREONI, W
    PHYSICAL REVIEW B, 1992, 45 (08): : 4203 - 4207
  • [2] Infrared Photoreflectance of III-V Semiconductor Materials (Review)
    Komkov, O. S.
    PHYSICS OF THE SOLID STATE, 2021, 63 (08) : 1181 - 1204
  • [3] REVIEW OF III-V SEMICONDUCTOR-MATERIALS AND DEVICES
    SEALY, BJ
    JOURNAL OF THE INSTITUTION OF ELECTRONIC AND RADIO ENGINEERS, 1987, 57 (01): : S3 - S12
  • [4] Growth of III-V semiconductor crystals under microgravity
    Yin ZhiGang
    Zhang XingWang
    Wu JinLiang
    SCIENTIA SINICA-PHYSICA MECHANICA & ASTRONOMICA, 2020, 50 (04)
  • [5] CHANNELING STUDIES OF III-V/III-V AND IV/III-V SEMICONDUCTOR MODULATED STRUCTURES
    CHANG, CA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 346 - 351
  • [6] SIMS QUANTIFICATION OF GROUP III-V SEMICONDUCTOR-MATERIALS
    RAMSEYER, GO
    COLTON, RJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 1356 - 1358
  • [7] EPITAXY OF III-V DILUTED MAGNETIC SEMICONDUCTOR-MATERIALS
    MUNEKATA, H
    OHNO, H
    VONMOLNAR, S
    HARWIT, A
    SEGMULLER, A
    CHANG, LL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 176 - 180
  • [8] III-V Semiconductor Photoelectrodes
    Siddiqi, Georges
    Pan, Zhenhua
    Hu, Shu
    SEMICONDUCTORS FOR PHOTOCATALYSIS, 2017, 97 : 81 - 138
  • [9] Stability of (114) and (114) facets in III-V compounds under usual MBE conditions
    Ponchet, A
    LeCorre, A
    Godefroy, A
    Salaun, S
    Poudoulec, A
    MICROELECTRONICS JOURNAL, 1995, 26 (08) : 783 - 788
  • [10] Plasma-surface interactions in the processing of III-V semiconductor materials
    Losurdo, M
    Capezzuto, P
    Bruno, G
    PURE AND APPLIED CHEMISTRY, 1998, 70 (06) : 1181 - 1186
12345