Radiation hard multi-quantum well InP/InAsP solar cells for space applications

被引：0
|
作者：
Walters, RJ
Summers, GP
Messenger, SR
Freundlich, A
Monier, C
Newman, F
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] SFA Inc, Largo, MD USA
[3] Univ Houston, Houston, TX USA
来源：
PROGRESS IN PHOTOVOLTAICS | 2000年 / 8卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The effect of proton irradiation on the photovoltaic response of p-i-n InP solar cells that include an InP/InAsP multi-quantum well (MQW) layer in the intrinsic region is studied. Data from cells with three different quantum well structures are presented along with data fr om a control cell grown without MQW layer. The results show how the addition of the MQW's improves the solar energy conversion efficiency thereby allowing the base to be as thin a 1 mu m while still maintaining a good photocurrent, In addition, the radiation response of the MQW cells is shown to be equal to or better than the InP control cell. Published in 2000 by John Wiley & Sons, Ltd.
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页码：349 / 354
页数：6
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