Custom silicon technology for SPAD-arrays with red-enhanced sensitivity and low timing jitter

被引:19
|
作者
Gulinatti, Angelo [1 ]
Ceccarelli, Francesco [1 ,2 ,3 ]
Ghioni, Massimo [1 ]
Rech, Ivan [1 ]
机构
[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, Piazza Leonardo Vinci 32, I-20133 Milan, Italy
[2] Consiglio Nazl Ric IFN CNR, Ist Foton & Nanotecnol, Piazza Leonardo Vinci 32, I-20133 Milan, Italy
[3] Politecn Milan, Dipartimento Fis, Piazza Leonardo Vinci 32, I-20133 Milan, Italy
基金
美国国家卫生研究院;
关键词
PHOTON AVALANCHE-DIODE; SPECTROSCOPY; RESOLUTION; DETECTORS; EMISSION; CIRCUIT;
D O I
10.1364/OE.413821
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Single-photon detection is an invaluable tool for many applications ranging from basic research to consumer electronics. In this respect, the Single Photon Avalanche Diode (SPAD) plays a key role in enabling a broad diffusion of these techniques thanks to its remarkable performance, room-temperature operation, and scalability. In this paper we present a silicon technology that allows the fabrication of SPAD-arrays with an unprecedented combination of low timing jitter (95 ps FWHM) and high detection efficiency at red and near infrared wavelengths (peak of 70% at 650 nm, 45% at 800 nm). We discuss the device structure, the fabrication process, and we present a thorough experimental characterization of the fabricated detectors. We think that these results can pave the way to new exciting developments in many fields, ranging from quantum optics to single molecule spectroscopy. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:4559 / 4581
页数:23
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