Simple model for the polarization effects in tip-enhanced Raman spectroscopy

被引：79
|
作者：
Ossikovski, Razvigor [1 ]
Nguyen, Quang [1 ]
Picardi, Gennaro [1 ]
机构：
[1] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France
来源：
PHYSICAL REVIEW B | 2007年 / 75卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.75.045412
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The paper addresses the polarization properties of tip enhanced Raman spectroscopy (TERS) through an experimental study on (001)- and (111)-oriented crystalline Si samples and quantitatively describes them by using a simple phenomenological model. The model, conceptually similar to that used in surface-enhanced Raman scattering (SERS), is based on the introduction of a phenomenological tip-amplification tensor accounting for the interaction of the tip with the electromagnetic field. It was found to be in a good agreement not only with our experimental data but also with the measurements and numerical simulations of other groups.
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页数：9
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