The influence of La content on photovoltaic effect of PZT thin films

被引：1

作者：

Sun Qian ^{[1
]}

Deng Hong-Mei ^{[2
]}

Yang Ping-Xiong ^{[1
]}

Chu Jun-Hao ^{[1
]}

机构：

[1] E China Normal Univ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[2] Shanghai Univ, Instrumental Anal & Res Ctr, Inst Mat, Shanghai 200444, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2013年 / 32卷 / 02期

基金：

中国国家自然科学基金;

关键词：

sol-gel process; PLZT thin films; photovoltaic effect; ELECTRICAL-PROPERTIES; PLZT FILMS;

D O I：

10.3724/SP.J.1010.2013.00128

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The polycrystalline thin films of (Pb1-xLax) (Zr0.52Ti0.48)(1-x/4) O-3 (PLZT) were fabricated on LNO/Si substrates by sol-gel method. X-ray diffraction showed that PLZT thin films in rhombohedral-tetragonal phase with a preferential (110) orientation can be obtained after a rapid thermal annealing process at 600 degrees C. This is further confirmed by Raman spectrum. With the decrease of La content, hysteresis loops of the thin films gradually broaden. Measurement of the photovoltaic effect in the films shows that photovoltage increases gradually with the increase of the content of La from 1% to 6%. It reaches a maximum there and then decreases when the La content is increased furthermore.

引用

页码：128 / 131

页数：4

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