Bias dependence in spin-polarized tunneling of ferromagnet ferromagnetic insulator (semiconductor)/ferromagnet junctions

被引：0

作者：

Li, Y ^{[1
]}

Li, BZ

Dai, DS

机构：

[1] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[3] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

COMMUNICATIONS IN THEORETICAL PHYSICS | 1999年 / 31卷 / 02期

关键词：

spin-polarized electron tunneling; magnetic tunnel junction; ferromagnetic barrier; bias dependence;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the nearly-free-eleceron approximation, the bias dependencies of electron transport properties of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions have been studied. Resonances appear in electron transmission probability. These resonances cause oscillations in the zero-temperature tunnel current and the resonances occur in tunnel conductance. Tunnel magnetoresistance (TMR) is an oscillatory function of bias. The TMR can reach a value as high as 100%. The bias dependencies of electron transport properties relate to the magnetic configurations of the junctions.

引用

页码：211 / 214

页数：4

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