Electrical Model Analysis of RF/High-Speed Performance for Different Designed TSV Patterns by Wideband Double Side Measurement Techniques

被引：0

作者：

Lin, Chun-Hsun ^{[1
]}

Liu, Chris ^{[1
]}

Huang, Hsin-Kai ^{[1
]}

Fan, Kuang-Ching ^{[1
]}

Lee, Hsin-Hung ^{[1
]}

机构：

[1] Siliconware Precis Ind Co Ltd, Adv Prod Design & Testing Dept, Corp R&D, Taichung 42749, Taiwan

来源：

2012 7TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT) | 2012年

关键词：

SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Within this paper, four different pitches of Through Silicon Via (TSV) of single-ended ground-signal-ground (GSG) signaling configuration with redistribution layer (RDL) and testing pad that ranging from 20 mu m, 50 mu m, 100 mu m to 200 mu m has been made to verify the Radio-Frequency (RF) characteristic of TSV. We propose the modified RF electrical equivalent model of TSV with its' de-embed patterns. With the help of the direct double side probing system, wide band measurement of S-parameters of up to 40 GHz and eye-diagrams of 40 Gb/s signal are made to validate the modeled results.

引用

页数：4

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