Determination of diffusion length by the surface electron beam induced voltage method

被引：0
|
作者：
Rau, EI [1 ]
Yakimov, EB [1 ]
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 91卷
关键词：
electron microscopy; electrical measurements; semiconductors; surface electron beam induced voltage;
D O I：
10.1016/S0921-5107(01)01023-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An application of the surface electron beam induced voltage (SEBIV) method for the contactless measurement of minority carrier diffusion length in semiconductor crystals is discussed. The signal formation in the SEBIV mode is analyzed. The SEBIV signal dependence on excitation parameters is simulated. The experimental dependence of SEBIV signal on the beam energy was compared with simulated ones and a rather good correlation between them is revealed. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：256 / 259
页数：4
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