Monolithic SiGe HBT variable gain amplifiers with a feedforward configuration for 5-GHz applications

被引:0
|
作者
Chae, KS [1 ]
Kim, CW [1 ]
机构
[1] Kyung Hee Univ, Coll Elect & Informat Engn, 1 Seochon Dong, Gyeonggi 449701, South Korea
关键词
SiGe; HBT; variable gain amplifier; feedforward; 5; GHz;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Monolithic SiGe BBT variable gain amplifiers with a feedforward configuration have been newly developed for 5-GHz applications. For bias-current control, two types of the VGA have been made: one using a coupled-emitter resistor and the other using HBT-based current source. At 5.2 GHz, both or the VGAs achieve a dynamic gain-control range of 23 dB with the control-voltage range from 0.4 to 2.6 V. The gain-tuning sensitivity is 90 mV/dB. The VGAs with an emitter resistor and a current source produce a maximum gain of 8.8 dB and 8.2 dB, respectively. At V-CTRL =2.4 V, an 1- dB compression output power P1-dB and dc bias current are 0 dBm and 59 mA in the VGA with an emitter resistor and -1.8 dBm and 71mA in that with a constant current source, respectively.
引用
收藏
页码:143 / +
页数:2
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