Molecular beam epitaxy of periodic BaF2/PbEuSe layers on Si(111)

被引：4
|
作者：
Fang, XM [1 ]
Wu, HZ
Shi, Z
McCann, PJ
Dai, N
机构：
[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA
[2] Univ Oklahoma, Lab Elect Properties Mat, Norman, OK 73019 USA
[3] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 03期
关键词：
D O I：
10.1116/1.590744
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bragg reflector structures consisting of BaF2/PbEuSe stacks have been epitaxially grown on CaF2/Si (111) substrates, The reflectors are centered at a wavelength of 4.0 mu m with a bandwidth of about 3.0 mu m. Reflectivity as high as 95% at the center wavelength has been achieved in three-stack reflectors. Cracks were visible under an optical Normarski microscope in two-stack reflectors, The formation of cracks is probably due to the accumulation of the residual thermal strain in thick layers or the hindrance of dislocation glide at the BaF2/PbEuSe interfaces. (C) 1999 American Vacuum Society. [S0734-211X(99)06203-4].
引用
收藏
页码：1297 / 1300
页数：4
相关论文
共 50 条
  • [1] Deposition of GaAs (111) epilayers on BaF2 (111)/Si (100) heterostructures by molecular beam epitaxy
    Stumborg, MF
    Santiago, F
    Chu, TK
    Boulais, KA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (05): : 2473 - 2477
  • [2] Molecular beam epitaxy of BaF2/CaF2 buffer layers on the Si(100) substrate for monolithic photoreceivers
    Filimonova N.I.
    Ilyushin V.A.
    Velichko A.A.
    Optoelectronics, Instrumentation and Data Processing, 2017, 53 (3) : 303 - 308
  • [3] Molecular Beam Epitaxy of AlN Layers on Si (111)
    Moreno, Jean-Christophe
    Frayssinet, Eric
    Semond, Fabrice
    Massies, Jean
    ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES, 2008, 1068 : 141 - 145
  • [4] A MICROSTRUCTURAL STUDY OF CRYSTALLINE DEFECTS IN PBSE/BAF2/CAF2 ON (111)SI GROWN BY MOLECULAR-BEAM EPITAXY
    MATHET, V
    GALTIER, P
    NGUYENVANDAU, F
    PADELETTI, G
    OLIVIER, J
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (1-2) : 241 - 249
  • [5] Characterization of epitaxial EuS(111) thin films on BaF2(111) and SrF2(111) substrates grown by molecular beam epitaxy
    Senba, Shinya
    Matsumoto, Naoki
    Jomura, Mitsuhiro
    Asada, Hironori
    Koyanagi, Tsuyoshi
    Kishimoto, Kengo
    Fukuma, Yasuhiro
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (12) : 2109 - 2112
  • [6] Characterization of epitaxial EuS(111) thin films on BaF2(111) and SrF2(111) substrates grown by molecular beam epitaxy
    Shinya Senba
    Naoki Matsumoto
    Mitsuhiro Jomura
    Hironori Asada
    Tsuyoshi Koyanagi
    Kengo Kishimoto
    Yasuhiro Fukuma
    Journal of the Korean Physical Society, 2013, 62 : 2109 - 2112
  • [7] Microstructural properties of single crystalline PbTe thin films grown on BaF2(111) by molecular beam epitaxy
    Si, JX
    Wu, HZ
    Xu, TN
    Cao, CF
    Huang, ZC
    CHINESE PHYSICS LETTERS, 2005, 22 (09) : 2353 - 2356
  • [8] Origin of Degradation of the CaF2/BaF2 Buffer Layers on Si(111)
    Neizvestny, I. G.
    Ishchenko, D. V.
    Akhundov, I. O.
    Suprun, S. P.
    Tereshchenko, O. E.
    DOKLADY PHYSICS, 2020, 65 (01) : 15 - 17
  • [9] Origin of Degradation of the CaF2/BaF2 Buffer Layers on Si(111)
    I. G. Neizvestny
    D. V. Ishchenko
    I. O. Akhundov
    S. P. Suprun
    O. E. Tereshchenko
    Doklady Physics, 2020, 65 : 15 - 17
  • [10] Hot wall beam epitaxial growth of PbTe layers on BaF2/CaF2/Si(111) substrates
    Belenchuk, A
    2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 143 - 146
12345