A new algorithm for faster full-thermodynamic device simulations

被引：4
|
作者：
Chuang, MY
Law, ME
机构：
[1] Department of Electrical and Computer Engineering, University of Florida, Gainesville
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 09期
关键词：
D O I：
10.1109/16.622621
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Full-thermodynamic device simulation solves drift-diffusion (DD), energy balance, and lattice self-heating equations simultaneously and the solution time is extensive. An algorithm to reduce the solution time is presented, The method uses a single lattice temperature to describe the self-heating in the whole semiconductor device. It is shown that the solution time is reduced by 20% and little error is induced compared with the full-thermodynamic simulations, This approach appears useful for submicron device structures.
引用
收藏
页码：1567 / 1570
页数：4
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