STUDY ON THRESHOLD OF LASER DAMAGE TO CCD AND CMOS IMAGE SENSORS

被引:0
|
作者
Lin Jun-Yang [1 ]
Shu Rong [1 ]
Huang Geng-Hua [1 ]
Fang Kang-Mei [1 ]
Yan Zhi-Xin [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
关键词
laser interference; CCD image sensors; CMOS sensors; damage threshold; laser;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Theoretical analyses and experimental research were done on the laser-induced interference and damage to CCD and CMOS image sensors. The 1064 nm laser interference threshold, damage threshold and completely destroy threshold of CCD and CMOS image sensors were measured under atmospheric pressure condition and vacuum condition respectively. Experimental results show that the three aforementioned thresholds of CCD or CMOS sensors have no obvious differences Under the two different pressure conditions. Experimental results also reveal that, compared to CMOS image sensors, CCD image sensors are easier to he interfered or damaged or even destroyed, while CMOS sensors have a better anti-jamming and anti-injury ability under each of the two conditions.
引用
收藏
页码:475 / 478
页数:4
相关论文
共 6 条
  • [1] GAN FX, 2002, J INFRARED MILLIM S, V21, P64
  • [2] LIU Z J, 1995, APPL LASER, V15, P85
  • [3] NI XW, 1997, OPTOELECTRONICS LASE, V8, P487
  • [4] [王世勇 Wang Shiyong], 2002, [半导体光电, Semiconductor Optoelectronics], V23, P106
  • [5] [胥杰 XU Jie], 2006, [激光杂志, Laser Journal], V27, P43
  • [6] [张英远 Zhang Yinyuan], 2006, [电子与信息学报, Journal of electronics & information technology], V28, P1758