Temperature-Dependent Photoluminescence Spectra of PbSe Quantum Dots for Temperature Markers

被引：1
|
作者：
Gu, Pengfei [1 ,2 ]
Wang, Yanan [1 ,2 ]
Cao, Jiajia [1 ,2 ]
Yan, Yu [2 ]
Zhang, Tieqiang [2 ]
Wang, Yiding [1 ]
Zhang, Yu [1 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China
来源：
ADVANCED COMPOSITE MATERIALS, PTS 1-3 | 2012年 / 482-484卷
关键词：
semiconductor quantum dots; PbSe; Temperature-dependent; Photoluminescence; NANOCRYSTALS; GAP;
D O I：
10.4028/www.scientific.net/AMR.482-484.2547
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
We here report the temperature effect on photoluminescence(PL) spectra of PbSe quantum dots (QDs), which exhibit a strong temperature dependence on their spectra position and intensity. They potentially act as the temperature marker, sensing temperature variations and reporting temperature changes remotely through optical readout. In addition, the temperature sensitivity characterized by peak position of PbSe QDs was found to be 0.39nm/degrees C in a range of 10-100 degrees C.
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页码：2547 / +
页数：2
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