Hole-phonon energy loss rate in boron doped silicon

被引：0

作者：

Richardson-Bullock, J. S. ^{[1
]}

Prest, M. J. ^{[1
]}

Prunnila, M.

Gunnarsson, D.

Shah, V. A. ^{[1
]}

Dobbie, A. ^{[1
]}

Myronoy, M. ^{[1
]}

Morris, R. J. H. ^{[1
]}

Whall, T. E. ^{[1
]}

Parker, E. H. C. ^{[1
]}

Leadley, D. R. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) | 2013年

关键词：

Hole; Electron; Phonon; Coupling; Energy Loss Rate; REFRIGERATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.

引用

页码：214 / 216

页数：3

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