Improvement of crystal quality and optical property in semi-polar (11-22) GaN-based light-emitting diodes grown on a SiNx interlayer

被引：0

作者：

Jeong, Joocheol ^{[1
]}

Jang, Jongjin ^{[1
]}

Hwang, Jungwhan ^{[1
]}

Jung, Chilsung ^{[1
]}

Kim, Jinwan ^{[1
]}

Lee, Kyungjae ^{[1
]}

Lim, Hyoungjin ^{[1
]}

Nam, Okhyun ^{[1
]}

机构：

[1] Korea Polytech Univ, LED Technol Ctr, Dept Nanoopt Engn, Shihung 429793, South Korea

来源：

JOURNAL OF CERAMIC PROCESSING RESEARCH | 2012年 / 13卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

GaN; Light emitting diodes; Semi-polar; Optical property; SiNx; A-PLANE GAN; REDUCTION; EMISSION; FILMS;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of semi-polar (11-22) GaN grown on SINx interlayer InGaN/GaN double quantum wells (DQWs) light-emitting diodes (LEDs) was investigated. The X-ray rocking curves of both on-axis and off-axis planes were narrowed down and the photoluminescence intensity of the (11-22) GaN grown on the SiNx interlayer was increased compared to that of GaN without SiNx interlayer. The optical power of LEDs with a SiNx interlayer was increased by 200% and 330% at injection currents of 20 mA and 100 mA, respectively, in comparison to the reference LEDs.

引用

页码：617 / 621

页数：5

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