A Novel Boosted Charge Transfer Circuit for High Speed Charge Domain Pipelined ADC

被引:0
|
作者
Chen Zhenhai [1 ,2 ]
Yu Zongguang [1 ,2 ]
Huang Songren [1 ,2 ]
Ji Huicai [2 ]
Zhang Hong [3 ]
机构
[1] Xidian Univ, Sch Microelect, Wide Bandgap Semicond Technol Disciplines State K, Xian 710071, Peoples R China
[2] China Elect Technol Grp Corp, Res Inst 58, Wuxi 214035, Peoples R China
[3] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China
来源
CHINESE JOURNAL OF ELECTRONICS | 2012年 / 21卷 / 04期
基金
中国国家自然科学基金;
关键词
Pipelined analog-to-digital converter; Charge domain; Low power; Charge transfer circuit; CALIBRATION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel Boosted charge transfer (BCT) circuit is proposed for Bucket-brigade devices (BBDs) based charge-domain (CD) pipelined Analog-to-digital converter (ADC). It can significantly lower the sensitivity on Process, voltage and temperature (PVT) variations of traditional BCT circuit, which can eliminate the Common mode (CM) charge control circuit in the existing CD pipelined ADC. With the proposed BCT circuit, a prototype ADC is realized in a 0.18 mu m CMOS process without using any common mode charge control techniques, with only 27mW power consumption at 1.8 V supply. It achieves Spurious free dynamic range (SFDR) of 67.7 dB, Signal-to-noise-and-distortion ratio (SNDR) of 55.8 dB and Effective number of bits (ENOB) of 9.0 for a 3.79 MHz input at full sampling rate. The Differential nonlinearity (DNL) is +0.5/-0.3 LSB, and the Integral nonlinearity (INL) is +0.7/-0.55 LSB.
引用
收藏
页码:627 / 632
页数:6
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