3D integration of a three-phase bi-directional power switch

被引：0

作者：

Solomon, Adane ^{[1
]}

Trentin, Andrew ^{[1
]}

Castellazzi, Alberto ^{[1
]}

机构：

[1] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

PROCEEDINGS OF THE 2011-14TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE 2011) | 2011年

关键词：

Integration; power switch; double-sided cooling; high performance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a high power density vertical integration scheme for bi-directional power switches. In this original approach, the power semiconductor devices are stacked in pairs, but are both connected with their backside to the cooling plane. Thus, double sided cooling is ensured, while power density and parasitic inductance values are improved as compared to previous approaches. In particular, this work considers a full 3-phase bi-directional switch, of the kind required, for instance, to implement a 3-to-1-phase matrix converter.

引用

页数：8

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