An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications

被引：42
|
作者：
Prado, Edemar O. [1 ,2 ]
Bolsi, Pedro C. [1 ,2 ]
Sartori, Hamiltom C. [2 ]
Pinheiro, Jose R. [1 ,2 ]
机构：
[1] Univ Fed Bahia, Energy Efficiency Lab, LABEFEA, BR-40170110 Salvador, BA, Brazil
[2] Univ Fed Santa Maria, GEPOC, Power Elect & Control Res Grp, BR-97105900 Santa Maria, RS, Brazil
来源：
ENERGIES | 2022年 / 15卷 / 14期
关键词：
comparative analysis; GaN; power MOSFET; power electronics; SiC; DC-DC CONVERTER; SILICON-CARBIDE MOSFETS; OPTIMAL-DESIGN; LOSS MODEL; EFFICIENCY; PERFORMANCE; DEVICES; HEMT;
D O I：
10.3390/en15145244
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage of 400 V, power levels from 1 kW to 16 kW (1 A-40 A) and frequencies from 1 kHz to 500 kHz. A methodology for selecting power MOSFETs in power electronics applications is also presented.
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收藏
页数：17
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