Response to "Comment on 'Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction at low temperature' " [Appl. Phys. Lett. 94, 166102 (2009)]

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作者：
Zhou, Hai [1 ,2 ,3 ]
Fang, Guojia [1 ,2 ,3 ]
Yuan, Longyan [1 ,2 ]
Wang, Chong [1 ,2 ]
Yang, Xiaoxia [1 ,2 ]
Huang, Huihui [1 ,2 ]
Zhou, Conghua [1 ,2 ]
Zhao, Xingzhong [1 ,2 ]
机构：
[1] Wuhan Univ, Sch Phys Sci & Technol, Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Sch Phys Sci & Technol, Key Lab Acoust & Photon Mat & Devices, Minist Educ, Wuhan 430072, Peoples R China
[3] Chinese Acad Sci, State Key Lab Transducer Technol, Beijing 100080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期
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O59 [应用物理学];
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页数：2
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    Lin, Yow-Jon
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (16)
  • [2] Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature
    Zhou, Hai
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    Wang, Chong
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    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (01)
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    Diaz-Calleja, R.
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    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (09)
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