Ultrahigh-Sensitivity and Fast-Speed Solar-Blind Ultraviolet Photodetector Based on a Broken-Gap van der Waals Heterodiode

被引:8
|
作者
Zhang, Li [1 ]
Wei, Zhenhua [2 ]
Wang, Xiuxiu [1 ]
Zhang, Luoyu [1 ]
Wang, Yi [3 ]
Xie, Chao [3 ]
Han, Tao [1 ]
Li, Feng [1 ]
Luo, Wei [2 ]
Zhao, Dongxu [4 ]
Long, Mingsheng [1 ]
Shan, Lei [1 ]
机构
[1] Anhui Univ, Inst Phys Sci & Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China
[2] Natl Univ Def Technol, Coll Sci, Changsha 410073, Peoples R China
[3] Anhui Univ, Ind Educ Res Inst Adv Mat & Technol Integrated Cir, Hefei 230601, Peoples R China
[4] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130021, Peoples R China
基金
中国国家自然科学基金;
关键词
photodetector; solar-blind ultraviolet; van der Waals; heterodiode; 2D materials; tin disulfide; SNS2; CRYSTALS; STATES; BULK;
D O I
10.1021/acsami.2c20546
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Broad-bandgap semiconductor-based solar-blind ultraviolet (SBUV) photodetectors have attracted considerable research interest because of their broad applications in missile plume tracking, flame detectors, environmental monitoring, and optical communications due to their solar-blind nature and high sensitivity with low background radiation. Owing to its high light absorption coefficient, abundance, and wide tunable bandgap of 2-2.6 eV, tin disulfide (SnS2) has emerged as one of the most promising compounds for application in UV-visible optoelectronic devices. However, SnS2 UV detectors have some undesirable properties such as slow response speed, high current noise level, and low specific detectivity. This study reports a metal mirror -enhanced Ta0.01W0.99Se2/SnS2 (TWS) van der Waals heterodiode-based SBUV photodetector with an ultrahigh photoresponsivity (R) of similar to 1.85 x 104 AW-1 and a fast speed with rising time (tau r) of 3.3 mu s and decay time (tau d) of 3.4 mu s. Notably, the TWS heterodiode device exhibits a significantly low noise equivalent power of similar to 1.02 x 10-18 W Hz-1/2 and a high specific detectivity of similar to 3.65 x 1014 cm Hz1/2 W-1. This study provides an alternative method for designing fast-speed SBUV photodetectors with enormous potential in applications.
引用
收藏
页码:14513 / 14522
页数:10
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共 21 条
  • [1] Self-Driven Fast-Speed Photodetector Based on BP/ReS2 van der Waals Heterodiode
    Ding, Jingzu
    Wang, Xiaoqing
    Song, Ze
    Wang, Suofu
    Lu, Yuan
    Wang, Wenhui
    Han, Tao
    Li, Feng
    Zhu, Xiangde
    Shan, Lei
    Long, Mingsheng
    [J]. ADVANCED SENSOR RESEARCH, 2023, 2 (09):
  • [2] Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse
    Tan, Chaoyang
    Yin, Shiqi
    Chen, Jiawang
    Lu, Yuan
    Wei, Wensen
    Du, Haifeng
    Liu, Kailang
    Wang, Fakun
    Zhai, Tianyou
    Li, Liang
    [J]. ACS NANO, 2021, 15 (05) : 8328 - 8337
  • [3] A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed
    Fan, Ming-Ming
    Liu, Ke-Wei
    Chen, Xing
    Zhang, Zhen-Zhong
    Li, Bing-Hui
    Shen, De-Zhen
    [J]. RSC ADVANCES, 2017, 7 (22) : 13092 - 13096
  • [4] p-GaSe/n-Ga2O3 van der Waals Heterostructure Photodetector at Solar-Blind Wavelengths with Ultrahigh Responsivity and Detectivity
    Wang, Yuehui
    Tang, Yuqing
    Li, Haoran
    Yang, Zhibin
    Zhang, Qingyi
    He, Zhenbei
    Huang, Xu
    Wei, Xianhua
    Tang, Weihua
    Huang, Wen
    Wu, Zhenping
    [J]. ACS PHOTONICS, 2021, 8 (08): : 2256 - 2264
  • [5] Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-GaO/p-Si Heterojunction
    Dong, Haoyan
    Ma, Shufang
    Niu, Yanping
    Yang, Zhi
    Zhang, Shuai
    Hu, Yu
    Hao, Xiaodong
    Han, Bin
    Li, Guoqiang
    Dong, Hailiang
    Xu, Bingshe
    [J]. IEEE ELECTRON DEVICE LETTERS, 2024, 45 (04) : 554 - 557
  • [6] Van der Waals Broken-Gap p-n Heterojunction Tunnel Diode Based on Black Phosphorus and Rhenium Disulfide
    Srivastava, Pawan Kumar
    Hassan, Yasir
    Gebredingle, Yisehak
    Jung, Jaehyuck
    Kang, Byunggil
    Yoo, Won Jong
    Singh, Budhi
    Lee, Changgu
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (08) : 8266 - 8275
  • [7] Promises of Main-Group Metal Chalcogenide-Based Broken-Gap van der Waals Heterojunctions for Tunneling Field Effect Transistors
    Xie, Shengying
    Jin, Hao
    Li, Jianwei
    Wei, Yadong
    [J]. ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (02) : 898 - 904
  • [8] Ultrasensitive Flexible Solar-Blind Photodetectors Based on Graphene/Amorphous Ga2O3 van der Waals Heterojunctions
    Wang, Yuehui
    Yang, Zhibin
    Li, Haoran
    Li, Shan
    Zhi, Yusong
    Yan, Zuyong
    Huang, Xu
    Wei, Xianhua
    Tang, Weihua
    Wu, Zhenping
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (42) : 47714 - 47720
  • [9] Fast-speed self-powered PEDOT:PSS/α-Ga2O3 nanorod array/FTO photodetector with solar-blind UV/visible dual-band photodetection
    Fan, Ming-Ming
    Xu, Kang-Li
    Cao, Ling
    Li, Xiu-Yan
    [J]. CHINESE PHYSICS B, 2022, 31 (04)
  • [10] Fast-speed self-powered PEDOT:PSS/α-Ga2O3 nanorod array/FTO photodetector with solar-blind UV/visible dual-band photodetection
    范明明
    许康丽
    曹玲
    李秀燕
    [J]. Chinese Physics B, 2022, (04) : 814 - 819