Thin Film Piezoelectric Nanogenerator Based on (100)-Oriented Nanocrystalline AlN Grown by Pulsed Laser Deposition at Room Temperature

被引:4
|
作者
Li, Wei [1 ]
Cao, Yunqi [2 ]
Sepulveda, Nelson [3 ]
机构
[1] Univ Vermont, Dept Mech Engn, 33 Colchester Ave, Burlington, VT 05405 USA
[2] Zhejiang Univ, Coll Control Sci & Engn, 38 Zheda Rd, Hangzhou 310027, Peoples R China
[3] Michigan State Univ, Dept Elect & Comp Engn, 428 S Shaw Lane, E Lansing, MI 48824 USA
基金
美国国家科学基金会;
关键词
piezoelectric nanogenerator; aluminum nitride; energy harvesting; pulsed laser deposition; piezoelectricity; piezoresponse force microscopy; wearable device; PERFORMANCE; COEFFICIENT; HYSTERESIS; FENG; GAN;
D O I
10.3390/mi14010099
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In wearable or implantable biomedical devices that typically rely on battery power for diagnostics or operation, the development of flexible piezoelectric nanogenerators (NGs) that enable mechanical-to-electrical energy harvesting is finding promising applications. Here, we present the construction of a flexible piezoelectric nanogenerator using a thin film of room temperature deposited nanocrystalline aluminium nitride (AlN). On a thin layer of aluminium (Al), the AlN thin film was grown using pulsed laser deposition (PLD). The room temperature grown AlN film was composed of crystalline columnar grains oriented in the (100)-direction, as revealed in images from transmission electron microscopy (TEM) and X-ray diffraction (XRD). Fundamental characterization of the AlN thin film by piezoresponse force microscopy (PFM) indicated that its electro-mechanical energy conversion metrics were comparable to those of c-axis oriented AlN and zinc oxide (ZnO) thin films. Additionally, the AlN-based flexible piezoelectric NG was encapsulated in polyimide to further strengthen its mechanical robustness and protect it from some corrosive chemicals.
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页数:10
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