Achieving phthalide-based fluorescent materials with hybridized local and charge-transfer characteristics for efficient deep blue OLEDs

被引:1
|
作者
Feng, Zijun [1 ]
Liu, Futong [1 ]
Cheng, Zhuang [1 ]
Ge, Shuyuan [1 ]
Wang, Yaxue [1 ]
Yan, Zhenyu [1 ]
Ma, Xiaobo [1 ]
Wang, Yan [2 ]
Lu, Ping [1 ]
机构
[1] Jilin Univ, State Key Lab Supramol Struct & Mat, Qianjin St 2699, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Chem, Qianjin St 2699, Changchun 130012, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
LIGHT-EMITTING-DIODES; EXCITED-STATE; EMITTERS;
D O I
10.1039/d4tc00121d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The development of high-efficiency blue organic light-emitting materials is of significant importance for future illumination and display applications. In this work, three blue emitters, PPT, PPPT and PAPT with D-A/D-pi-A architectures have been developed, in which phthalide was first adopted as a functional acceptor. As revealed by theoretical calculations and photophysical experiments, PPT, PPPT and PAPT all display a certain degree of orbital overlap of the local excited state and exhibit typical hybridized local and charge-transfer (HLCT) characteristics. The multiple supramolecular interactions induced by phthalides endow them with high PLQYs. PAPT with the pi bridge of anthracene exerts the advantages of the LE-dominated HLCT excited state and high-lying reverse intersystem crossing (hRISC) via a hot exciton channel to obtain the highest PLQY and external quantum efficiency (EQE). As a result, the PAPT-based non-doped device achieved the maximum EQE of 7.5% at a high luminance of 1800 cd m-2. Particularly, the doped device based on PAPT exhibited superior performance with the maximum EQE of 10.2% and CIE coordinates of (0.151, 0.085), and the full width at half maximum (FWHM) was determined to be only 53 nm. The results offer a simple and efficient approach for engineering D-A/D-pi-A type HLCT materials to achieve high-efficiency deep blue OLEDs. Three blue emitters, PPT, PPPT and PAPT with D-A/D-pi-A architectures have been developed, in which phthalide was first adopted as a functional acceptor. The device based on PAPT exhibited maximum EQE of 10.2% and FWHM of 53 nm.
引用
收藏
页码:3881 / 3887
页数:7
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