Dielectric capacitors have become an important component in current pulsed power devices and thus have attracted great research interest in recent years. Among all kinds of dielectric materials, the bismuth ferrite (BiFeO3)-based ceramic capacitors show possible applications in dielectric energy storage because of their large polarization. However, the relatively high conductivity badly limits the improvement of electric breakdown strength, thus leading to low energy density. Herein, the perovskite end-member La(Mg2/3Nb1/3)O3 and sintering aid MnO2 were simultaneously introduced into BiFeO3-SrTiO3 solid solutions to improve the relaxation features and electric breakdown strength. Accordingly, a high recoverable energy density of 6.3 J/cm3 and an acceptable efficiency of 74.3% were realized under 450 kV/cm. In addition, the good frequency/thermal stability and superior charge-discharge performances were also realized. This work provides feasible approaches to modify the capacitive energy storage of BiFeO3-based relaxor ferroelectric ceramics.
机构:Xi An Jiao Tong Univ, Minist Educ, Elect Mat Res Lab, Key Lab, Xian 710049, Peoples R China
Wang, Tong
Jin, Li
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Xi An Jiao Tong Univ, Minist Educ, Elect Mat Res Lab, Key Lab, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Minist Educ, Elect Mat Res Lab, Key Lab, Xian 710049, Peoples R China
Jin, Li
Li, Chunchun
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机构:Xi An Jiao Tong Univ, Minist Educ, Elect Mat Res Lab, Key Lab, Xian 710049, Peoples R China
Li, Chunchun
Hu, Qingyuan
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机构:Xi An Jiao Tong Univ, Minist Educ, Elect Mat Res Lab, Key Lab, Xian 710049, Peoples R China
Hu, Qingyuan
Wei, Xiaoyong
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机构:Xi An Jiao Tong Univ, Minist Educ, Elect Mat Res Lab, Key Lab, Xian 710049, Peoples R China
机构:
Wenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, ChinaWenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
Song, Xiao-Qiang
Yin, Chang-Zhi
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Wenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, ChinaWenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
Yin, Chang-Zhi
Zou, Zheng-Yu
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Aerospace Nanhu Electronic Information Technology Co., Ltd, Wuhan, ChinaWenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
Zou, Zheng-Yu
Yang, Jia-Qing
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Wenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, ChinaWenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
Yang, Jia-Qing
Zeng, Fang-Fang
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Wenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, ChinaWenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
Zeng, Fang-Fang
Wu, Jia-Min
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State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, ChinaWenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
Wu, Jia-Min
Shi, Yu-Sheng
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State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, ChinaWenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
Shi, Yu-Sheng
Lu, Wen-Zhong
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Wenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, China
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, ChinaWenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
Lu, Wen-Zhong
Lei, Wen
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Wenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, China
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, ChinaWenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou, China
Lei, Wen
Journal of the American Ceramic Society,
2022,
105
(12):
: 7415
-
7425
机构:
Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
Guilin Univ Technol, Coll Mat Sci & Engn, Guilin 541004, Guangxi, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
Qin, Hailan
Zhao, Jianwei
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Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
Zhao, Jianwei
Chen, Xiaoxin
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h-index: 0
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Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
Guilin Univ Technol, Coll Mat Sci & Engn, Guilin 541004, Guangxi, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
Chen, Xiaoxin
Li, Hongtian
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h-index: 0
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Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
Guilin Univ Technol, Coll Mat Sci & Engn, Guilin 541004, Guangxi, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
Li, Hongtian
Wang, Shenghao
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h-index: 0
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Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
Wang, Shenghao
Du, Yuxiao
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Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
Du, Yuxiao
Mohamad, Ahmad Azmin
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Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Energy Mat Res Grp EMRG, Nibong Tebal, MalaysiaChinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China
Mohamad, Ahmad Azmin
Zhou, Huanfu
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h-index: 0
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Guilin Univ Technol, Coll Mat Sci & Engn, Guilin 541004, Guangxi, Peoples R ChinaChinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Guangdong, Peoples R China