Scalable Production of Highly Conductive 2D NbSe2 Monolayers with Superior Electromagnetic Interference Shielding Performance

被引:0
|
作者
Li, Yong [1 ]
Cao, Jianyun [1 ]
Chen, Guoliang [2 ,3 ]
He, Lijun [1 ]
Du, Xincheng [1 ]
Xie, Jiyang [1 ,4 ]
Wang, Yaming [2 ]
Hu, Wanbiao [1 ,4 ]
机构
[1] Yunnan Univ, Sch Mat & Energy, Yunnan Key Lab Electromagnet Mat & Devices, Kunming 650091, Peoples R China
[2] Harbin Inst Technol, Minist Ind & Informat Technol, Inst Adv Ceram, Key Lab Adv Struct Funct Integrated Mat & Green Mf, Harbin 150001, Peoples R China
[3] Harbin Inst Technol, Sch Energy Sci & Engn, Key Lab Aerosp Thermophys, Minist Ind & Informat Technol, Harbin 150001, Peoples R China
[4] Yunnan Univ, Electron Microscopy Ctr, Kunming 650500, Peoples R China
基金
中国国家自然科学基金;
关键词
NbSe2; monolayer; electrochemicalexfoliation; thin films; electromagnetic interferenceshielding; GRAPHENE; NANOCOMPOSITES; GRAPHITE; FILMS;
D O I
10.1021/acsami.3c15817
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin, flexible, and electrically conductive films are in demand for electromagnetic interference (EMI) shielding. Two-dimensional NbSe2 monolayers have an electrical conductivity comparable to those of metals (10(6)-10(7) S m(-1)) but are challenging for high-quality and scalable production. Here, we show that electrochemical exfoliation of flake NbSe2 powder produces monolayers on a large scale (tens of grams), at a high yield (>75%, monolayer), and with a large average lateral size (>20 mu m). The as-exfoliated NbSe2 monolayer flakes are easily dispersed in diverse organic solvents and solution-processed into various macroscopic structures (e.g., free-standing films, coatings, patterns, etc.). Thermal annealing of the free-standing NbSe2 films reduces the interlayer distance of restacked NbSe2 from 1.18 to 0.65 nm and consequently enhances the electrical conductivity to 1.16 x 10(6) S m(-1), which is superior to those of MXenes and reduced graphene oxide. The optimized NbSe2 film shows an EMI shielding effectiveness (SE) of 65 dB at a thickness of 5 mu m (>110 dB for a 48-mu m-thick film), among the highest in materials of similar thicknesses. Moreover, a laminate of two layers of the NbSe2 film (2 mu m thick) with an insulating interlayer shows a high SE of 85 dB, surpassing that of the 20-mu m-thick NbSe2 film (83 dB). A two-layer theoretical model is proposed, and it agrees with the experimental EMI SE of the laminated NbSe2 films. The ability to produce NbSe2 monolayers on a tens of grams scale will enable their diverse applications beyond EMI shielding.
引用
收藏
页码:6250 / 6260
页数:11
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