Atomic layer deposition of HfNx films and improving the film performance by annealing under NH3 atmosphere

被引：3

作者：

Ryoo, Seung Kyu ^{[1
]}

Kim, Beom Yong ^{[1
,2
]}

Lee, Yong Bin ^{[1
]}

Park, Hyeon Woo ^{[1
]}

Lee, Suk Hyun ^{[1
]}

Oh, Minsik ^{[1
]}

Lee, In Soo ^{[1
]}

Byun, Seung Yong ^{[1
]}

Shim, Doo Sup ^{[1
,2
]}

Lee, Jae Hoon ^{[1
,2
]}

Kim, Ha Ni ^{[1
,2
]}

Do Kim, Kyung ^{[1
]}

Hwang, Cheol Seong ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

[2] SK Hynix Semicond Inc, Icheon 17336, Gyeonggi, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2023年 / 11卷 / 24期

基金：

新加坡国家研究基金会;

关键词：

PRECURSORS; HAFNIUM; GROWTH; HFO2; TIN;

D O I：

10.1039/d2tc03964h

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

HfNx films were deposited by atomic layer deposition (ALD) using Hf[N(CH3)(C2H5)](4) (TEMAHf) and NH3 as the Hf-precursor and reactant gas, respectively. A precleaning step using TEMAHf as a reducing agent was devised to minimize the oxygen concentration in the as-deposited film. Consequently, the oxygen concentration in the film was reduced by similar to 66%. In addition, the carbon impurity concentration caused by the side effects of the precleaning step and the remaining oxygen concentration were effectively reduced through post-NH3 annealing. The oxygen concentration inside HfNx decreased as the annealing temperature increased. HfNx films annealed under 900 degrees C showed dielectric properties similar to hafnium oxynitride (HfOxNy). However, films annealed over 950 degrees C transformed into a more electrically conducting HfN film, showing a resistivity of similar to 10(6) mu omega cm.

引用

页码：8018 / 8026

页数：10

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