Variation in thermal stability of Ge1-xSnx films for infrared device applications

被引：2
|
作者：
Lemire, Amanda N. [1 ]
Grossklaus, Kevin A. [1 ]
Vandervelde, Thomas E. [1 ]
机构：
[1] Tufts Univ, Elect & Comp Engn Dept, Renewable Energy & Appl Photon Labs, 161 Coll Ave, Medford, MA 02155 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2023年 / 41卷 / 05期
基金：
美国国家科学基金会;
关键词：
GESN; GENERATION; THICKNESS; LAYER;
D O I：
10.1116/6.0002680
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on changes in Ge1-xSnx films (0.065 = x = 0.144) after short high-temperature anneals. Films were grown by molecular beam epitaxy on (001) Ge wafers, rapidly annealed, and characterized by x-ray diffraction, Raman spectroscopy, and optical microscopy. Sn segregated to the surface after a maximum temperature is inversely related to the Sn content. Lower content films showed little to no improvement in crystal quality below segregation temperatures, while higher content and partially relaxed films demonstrated improved uniformity for moderate annealing.
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页数：8
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