Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

被引：2

作者：

Kang, Dongyeon ^{[1
]}

Kim, Wonjung ^{[1
]}

Jang, Jun Tae ^{[1
]}

Kim, Changwook ^{[2
]}

Kim, Jung Nam ^{[3
]}

Choi, Sung-Jin ^{[1
]}

Bae, Jong-Ho ^{[1
]}

Kim, Dong Myong ^{[1
]}

Kim, Yoon ^{[3
]}

Kim, Dae Hwan ^{[1
,2
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea

[2] Kookmin Univ, Circadian ICT Res Ctr, Seoul 02707, South Korea

[3] Univ Seoul, Sch Elect & Comp Engn, Seoul 02504, South Korea

来源：

IEEE ACCESS | 2023年 / 11卷

基金：

新加坡国家研究基金会;

关键词：

Transistors; Neuromorphics; Tunneling; Threshold voltage; Nonvolatile memory; Logic gates; Depression; Synaptic communication; Synapse device; neuromorphic system; IGZO; short-term memory; long-term memory; synaptic transistor; POTENTIATION; PLASTICITY;

D O I：

10.1109/ACCESS.2023.3249479

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory (STM) and long-term memory (LTM) through the control of the amplitude and the number of input pulses. The STM operated by ion movement in the gate dielectrics occurs when the input amplitude is relatively small (< 9 V). The LTM operated through the storage of electrons in the FG occurs when the input amplitude is relatively large (> 10 V). In addition, as the number of input pulses increases, information is stored for a longer time. Our FG IGZO synaptic transistor could be a promising device solution for brain-inspired computing systems.

引用

页码：20196 / 20201

页数：6

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