Photoinduced charge carrier dynamics in germanium

被引：4

作者：

Inzani, G. ^{[1
]}

Eskandari-asl, A. ^{[2
]}

Adamska, L. ^{[3
]}

Moio, B. ^{[1
,4
]}

Dolso, G. L. ^{[1
]}

Di Palo, N. ^{[1
,4
]}

D'Onofrio, L. J. ^{[2
]}

Lamperti, A. ^{[5
]}

Molle, A. ^{[5
]}

Rozzi, C. A. ^{[3
]}

Borrego-Varillas, R. ^{[4
]}

Nisoli, M. ^{[1
,4
]}

Pittalis, S. ^{[3
]}

Avella, A. ^{[2
,6
,7
]}

Lucchini, M. ^{[1
,4
]}

机构：

[1] Politecn Milan, Dept Phys, I-20133 Milan, Italy

[2] Univ Salerno, Dipartimento Fis ER Caianiello, I-84084 Fisciano, SA, Italy

[3] CNR, Ist Nanosci, Via Campi 213-A, I-41125 Modena, Italy

[4] CNR, IFN, Inst Photon & Nanotechnol, I-20133 Milan, Italy

[5] CNR, IMM, Unit Agrate Brianza, I-20864 Agrate Brianza, MB, Italy

[6] UoS Salerno, CNR, SPIN, I-84084 Fisciano, SA, Italy

[7] Univ Salerno, Unita CNISM Salerno, I-84084 Fisciano, SA, Italy

来源：

NUOVO CIMENTO C-COLLOQUIA AND COMMUNICATIONS IN PHYSICS | 2023年 / 46卷 / 04期

关键词：

ATTOSECOND; ELECTRON;

D O I：

10.1393/ncc/i2023-23110-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The light-induced injection of charge carriers from the valence to the conduction band of a solid, and their subsequent thermalization and relaxation, are fundamental physical processes. They allow dynamically altering the conduc-tivity of a semiconductor, controlling its electro-optical properties with light fields. In this paper, we discuss the elusive photoinjection mechanism occurring during light-matter interaction, to then focus on the charge thermalization and relaxation processes in germanium.

引用

页数：4

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