A MoSSe/MXene-Based High Performance UV-Vis-NIR Photodetector

In this letter, we report a hydrothermally synthesized MoSSe-based wideband photodetector (PD) offering excellent responsivity with sub-second response time. The overall device structure is MXene/MoSSe/Ag with Si as the substrate. The cathode and anode contact of the PD is fabricated with MXene (Ti(3)C(2)Tx) and Ag, respectively. The Ti(3)C(2)Tx and MoSSe layers are deposited using the spin-coating method, while the Ag electrode is deposited using the thermal evaporation technique. The fabricated PD exhibits excellent photodetection capability between 350 nm to 950 nm with a peak responsivity of 8.89 A.W-1 at 460 nm. The measured value of external quantum efficiency (EQE), and detectivity (D*) of the PD at 420 nm at 24.96% and 9.07 x 10(9) Jones, respectively. Also, the linearity measurement indicates the efficacy of the PD up to 343 K. In terms of transient performance, the measured rise and fall time of the PD are approximately 0.12 sec and 0.13 sec, respectively.