Material 's selection rules;
High performance;
Triboelectric nanogenerator;
Ambient environment;
HUMIDITY;
D O I:
10.1016/j.mattod.2023.03.008
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Selecting suitable triboelectric materials for triboelectric nanogenerators (TENGs) with excellent integrated performance at ambient environment remains a challenge. Here, we propose a set of universal material's selection rules for TENGs with comprehensive material's properties, including surface charge density in low and high relative humidity, moisture resistance rate, and friction coefficient. The influence mechanisms of environmental factors on the output performance of TENG are first revealed. Based on the selection rules, comprehensive selection series are ranked for all types of TENGs with fifteen triboelectric material pairs (cumulative sixty sets of samples). Additionally, two TENG integrated devices are also presented to confirm the generality and feasibility of the selection rules. The moisture resistance rate reaches up to 124% after working in ambient conditions with 95% relative humidity for 36, 000 s. This work provides a significant guideline for triboelectric material's selection and promotes the practical applications of TENG.
机构:
Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16136 Genoa, Italy
CNR, Inst Microelect & Microsyst, Via C Olivetti 2, I-20864 Milan, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16136 Genoa, Italy
Pace, G.
Ansaldo, A.
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Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16136 Genoa, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16136 Genoa, Italy
Ansaldo, A.
Serri, M.
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Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16136 Genoa, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16136 Genoa, Italy
Serri, M.
Lauciello, S.
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Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16136 Genoa, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16136 Genoa, Italy
Lauciello, S.
Bonaccorso, F.
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Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16136 Genoa, Italy
BeDimens SpA, Via Lungotorrente Secca 3d, I-16163 Genoa, ItalyIst Italiano Tecnol, Graphene Labs, Via Morego 30, I-16136 Genoa, Italy
机构:
Dalian Maritime Univ, Marine Engn Coll, Dalian 116026, Peoples R China
Univ Calif Los Angeles, Dept Bioengn, Los Angeles, CA 90095 USADalian Maritime Univ, Marine Engn Coll, Dalian 116026, Peoples R China
Zou, Yongjiu
Xu, Jing
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机构:
Univ Calif Los Angeles, Dept Bioengn, Los Angeles, CA 90095 USADalian Maritime Univ, Marine Engn Coll, Dalian 116026, Peoples R China
Xu, Jing
Chen, Kyle
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Univ Calif Los Angeles, Dept Bioengn, Los Angeles, CA 90095 USADalian Maritime Univ, Marine Engn Coll, Dalian 116026, Peoples R China
Chen, Kyle
Chen, Jun
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Univ Calif Los Angeles, Dept Bioengn, Los Angeles, CA 90095 USADalian Maritime Univ, Marine Engn Coll, Dalian 116026, Peoples R China
机构:
Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R ChinaBeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
Chen, Aihua
Zhang, Chen
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机构:
Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing Key Lab Micronano Energy & Sensor, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R ChinaBeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
Zhang, Chen
Zhu, Guang
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机构:
Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing Key Lab Micronano Energy & Sensor, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China
Univ Nottingham Ningbo China, Dept Mech Mat & Mfg Engn, New Mat Inst, Ningbo 315100, Peoples R ChinaBeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
Zhu, Guang
Wang, Zhong Lin
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h-index: 0
机构:
Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing Key Lab Micronano Energy & Sensor, CAS Ctr Excellence Nanosci, Beijing 100083, Peoples R China
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USABeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China