Highly in-plane anisotropic 2D ReSe2 for polarization-sensitive photodetectors

被引:6
|
作者
Song, Shuang [1 ,2 ]
Zhang, Guoping [1 ,2 ]
Qiao, Jie [1 ,2 ]
Chen, Bingxu [3 ]
Shen, Mengyan [3 ]
Yuan, Xiaocong [3 ]
Somekh, Michael G. [1 ,2 ]
Feng, Fu [1 ,2 ]
机构
[1] Shenzhen Univ, Nanophoton Res Ctr, Shenzhen Key Lab Microscale Opt Informat Technol, Shenzhen, Peoples R China
[2] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen, Peoples R China
[3] Chinese Univ Hong Kong, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
Anisotropic; ReSe2; Photodetector; Field-effective transistors; Polarization-sensitive photodetector; Transient absorption; BLACK PHOSPHORUS; FEW-LAYER; THERMAL-CONDUCTIVITY; HIGH-PERFORMANCE; OPTOELECTRONICS; MONOLAYER; CARRIERS;
D O I
10.1016/j.physb.2023.415000
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Here we report a new member of in-plane anisotropic 2D materials Rhenium Diselenide (ReSe2) which holds a stable distorted 1 T' phase with its relatively narrow bandgap to explore the in-plane anisotropic structural, electrical, and optical properties. The proposed polarization-sensitive photodetectors based on few-layer ReSe2 provides highly anisotropic photodetection behavior with linearly dichroic ratio up to & AP;2.62 under 808 nm illumination. We measured carrier transport in space and time by mapping carrier density in a ReSe2 plate using transient absorption microscopy. These results directly determined the carrier diffusion coefficients of about 4100 cm2 s-1 and 2900 cm2 s-1 along the armchair and zigzag directions, respectively, providing fundamental parameters to better understand the anisotropy of ReSe2 and promote future 2D optoelectronic applications in polarization-sensitive detection.
引用
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页数:9
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