Depth distribution analysis of alloying and impurity elements in Ni-Ti alloy thin films using secondary ion mass spectrometer

Ni-rich Ni-Ti thin films of various compositions and thickness (69 nm -141 nm) were deposited on Si (111) substrate by magnetron sputtering system using equiatomic NiTi alloy sputtering target. X-ray reflectivity analysis of the thin films deposited at room temperature showed the presence of a layered structure as: NiO/ Ni-Ti/NiO/SiO2 on Si substrate. Secondary ion mass spectrometry (SIMS) was used to determine the qualitative (intensity) depth distribution of elements Ni, Ti, O and Si in the films using MCs+ approach. Relative sensitivity factor values were utilized to convert the qualitative depth profiles to concentration depth profiles. Surface and depth distribution of alloying elements in the deposited films were investigated. It was observed that the films deposited at high sputtering power and working pressure resulted in more non-uniform depth distribution of alloying elements compared to films deposited at low sputtering power and working pressure. SIMS depth profile data showed the presence of high oxygen contaminations at the surface and at the interface of the films. The Ti concentration in the deposited films depends upon the background oxygen contamination present in the deposition chamber during sputtering process. The concentration of Ni in the films deposited under similar working pressure increases with increase in the sputtering power. However, with increase in working pressure during deposition process results in decrease in the concentration of both Ni and Ti in the deposited films. In order to study the effect of insitu substrate heating on the distribution of alloying and impurity elements, one of the film was deposited on heated Si substrate. The film deposited on heated substrate represents the layer structure as NiTiO3 on Si substrate. The concentration of oxygen in the film deposited on heated substrate is comparatively higher than those deposited at room temperature.