A Compact Double-Exponential Circuit for Single Event Transient Emulation

被引：0

作者：

Bota, Sebastia A. ^{[1
]}

Barcelo, Salvador ^{[1
]}

Torrens, Gabriel ^{[1
]}

Perello, Rafel ^{[1
]}

Verd, Jaume ^{[1
]}

de Paul, Ivan ^{[1
]}

Segura, Jaume ^{[1
]}

机构：

[1] Univ Illes Balears, Grp Sistemes Elect, Palma De Mallorca, Spain

来源：

2023 38TH CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS, DCIS | 2023年

关键词：

Soft errors; single event transient; single event upset; critical charge estimation; integrated circuit design; radiation hardening; electrical simulation; CMOS; DESIGN; CHARGE;

D O I：

10.1109/DCIS58620.2023.10335967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a compatible CMOS circuit to emulate the single event transients produced by radiation. The circuit has a control input to modulate the amount of injected charge, which can facilitate the experimental measurement of the critical charge related to a given component. We have found that using a 65 nm technology it is possible to reproduce a double exponential pulse with an error of 1.2% in the peak current and 8.2% in pulse width for an injected charge of 10 fC.

引用

页数：6

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