Magnetotransport Study of Dirac Metal FeSn Thin Films Grown on Silicon Substrates

被引：2

作者：

Bhattarai, Niraj ^{[1
,2
]}

Forbes, Andrew W. ^{[1
,2
]}

Saqat, Raghad S. H. ^{[1
,2
]}

Pegg, Ian L. ^{[1
,2
]}

Philip, John ^{[1
,2
]}

机构：

[1] Catholic Univ Amer, Dept Phys, Washington, DC 20064 USA

[2] Catholic Univ Amer, Vitreous State Lab, Washington, DC 20064 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2023年 / 220卷 / 09期

关键词：

Hall effect; magnetotransport; resistivity; thin film; SN NANOCRYSTALLINE FILMS; MOLECULAR-BEAM EPITAXY; KAGOME;

D O I：

10.1002/pssa.202200677

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of iron-tin alloy FeSn are grown on silicon substrates and their structural and transport properties are investigated for the first time. Herein, the molecular beam epitaxy method is used to grow 50 and 30 nm thick FeSn films on silicon substrates containing 10 nm of MgO as a buffer layer. The films are characterized structurally using an X-ray diffractometer, showing a hexagonal crystal structure with the space group P6/mmm (191). The results from electrical and magnetotransport measurements show these films exhibit characteristics close to metals. Herein, the magnetotransport properties of the thin films which show positive magnetoresistance and sample-dependent Hall effect with possible multiband transport are further measured.

引用

页数：6

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