Compact Dual-Passband Doherty Power Amplifier Based on Stub-Loaded Stepped-Impedance Transformer

被引:1
|
作者
Zhou, Li-Heng [1 ]
Zhou, Xin Yu [2 ]
Chan, Wing Shing [3 ]
机构
[1] Nantong Univ, Sch Informat Sci & Technol, Nantong 226007, Peoples R China
[2] Hong Kong Polytech Univ, Dept Elect & Informat Engn, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Dept Elect Engn, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
Doherty power amplifier; dual passbands; stub-loaded stepped-impedance transformer; transmission zero; DESIGN; BANDWIDTH;
D O I
10.1109/TCSI.2023.3323457
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a dual-band Doherty power amplifier (DPA) is proposed that can operate over two wide passbands, which is realized by multiple transmission zeros (TZs) in an all-pass response. The short/open stub loaded stepped-impedance transformers act as the output matching networks (OMNs) in both carrier and peaking paths. The shunted stubs not only generate TZs but also perform impedance conversion, simultaneously satisfying the load-pull requirements at both output back off (OBO) and saturation. This is achieved over two wide frequency ranges. The combination between the OMNs in the two paths realizes a dual-passband response, even though the number of TZs at saturation is one less than that at OBO. A prototype DPA is implemented based on two 10-W GaN transistors to validate the methodology. Measured lower and upper frequency bands are from 1.35 to 1.75 GHz and 3.05 to 3.45 GHz, respectively, with both having 400 MHz operating bandwidths. Measured results demonstrate a maximum saturated gain of 9.2 dB and an output power of 43.8 dBm. Maximum 6-dB OBO and saturated efficiencies (eta)$ are 58% and 72%, respectively. The circuit occupies a very compact size with an area of0.5 lambda(g) x 0.43 lambda(g).
引用
收藏
页码:99 / 109
页数:11
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