Size and shape control of CVD-grown monolayer MoS2

被引:15
|
作者
Cho, Yong Jin
Sim, Yumin
Lee, Je -Ho
Hoang, Nguyen The
Seong, Maeng-Je [1 ]
机构
[1] Chung Ang Univ, Dept Phys, Seoul 06974, South Korea
基金
新加坡国家研究基金会;
关键词
Chemical vapor deposition; Molybdenum disulfide; Sulfur concentration; 2-Dimensional materials; CHEMICAL-VAPOR-DEPOSITION; VALLEY POLARIZATION; EVOLUTION; CRYSTALS; PHASE; OPTOELECTRONICS; MOO3;
D O I
10.1016/j.cap.2022.11.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molybdenum disulfide (MoS2) has attracted great attention because of its unique physical properties and wide potential applications in electronic, optoelectronic devices. Chemical vapor deposition (CVD) turned out to be a powerful tool for producing MoS2 thin layers. Nonetheless, how the concentration of vapor-phase precursor influences the size and shape change of MoS2 is not clearly understood yet. In this work, we designed a gradient of sulfur (S) concentration during CVD growth of MoS2 to investigate how S concentration affects its size and shape change. The shape of MoS2 film changes from triangle to hexagon, then back to triangle as S concentration decreases. We also analyzed the uniformity and crystal quality of the CVD-grown MoS2 by using optical mi-croscopy, Raman, photoluminescence (PL), circularly polarized PL, and atomic force microscopy.
引用
收藏
页码:99 / 104
页数:6
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