Electric field induced large Rashba effect and topological phase transition in halide perovskite superlattices

被引:3
|
作者
Wang, Xinyu [1 ,2 ]
Li, Xu [1 ,2 ]
Tian, Hao [3 ]
Sang, Hai [1 ]
Zhou, Jian [1 ,2 ]
Chen, Lan [1 ,2 ,4 ]
Zhao, Hong Jian [5 ]
Wu, Di [1 ,2 ]
Zhang, Haijun [1 ]
Bellaiche, Laurent [6 ]
Liu, Jun-Ming [1 ]
Yang, Yurong [1 ,2 ]
机构
[1] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Mat Sci & Engn, Jiangsu Key Lab Artificial Funct Mat, Nanjing 210093, Peoples R China
[3] Zhengzhou Normal Univ, Sch Phys & Elect Engn, Zhengzhou 450044, Peoples R China
[4] Nanjing Univ, Nantong Inst Mat Engn Technol, Nantong 226001, Peoples R China
[5] Jilin Univ, Coll Phys, Int Ctr Comp Method & Software, Changchun 130012, Peoples R China
[6] Univ Arkansas, Inst Nanosci & Engn, Phys Dept, Fayetteville, AR 72701 USA
基金
国家重点研发计划; 美国国家科学基金会;
关键词
SINGLE DIRAC CONE; SPIN; INSULATOR;
D O I
10.1103/PhysRevB.108.045114
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We introduce superlattices made of ferroelectric halide perovskites as a class of functionalmaterials possessing large Rashba effect and phase transition from normal insulator (NI) to topological insulator (TI) induced by an electric field. Using first-principles methods, in CsPbI3/CsSiI3 and CsSnI3/CsSiI3 superlattices, we found a nonmonotonic Rashba parameter with respect to the magnitude of polarization and large maximal Rashba effect at a critical polarization, where the phase transition from NI to TI occurs when changing the polarization. This phase transition and the large maximal Rashba effect are related to band-gap engineering under an electric field. In contrast to traditional nonpolar TIs, in these ferroelectric TIs, the energy level of the Dirac point and the spin texture of surface states are largely tunable by changing polarization or strain. Our results thus highlight the interplay among ferroelectricity, Rashba effect, and topological order in a single material, which is promising toward electronic and spintronic applications.
引用
收藏
页数:7
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