Synthesis and Volatility Characterization of Mo(II) and W(II) Compounds for Thin Films

被引:0
|
作者
Park, Da-Ae [1 ]
Son, Ji Young [1 ,2 ]
Seo, Ji Min [1 ,3 ]
Park, Bo Keun [1 ,4 ]
机构
[1] Korea Res Inst Chem Technol KRICT, Thin Film Mat Res Ctr, Daejeon 34114, South Korea
[2] Korea Univ, Dept Chem, Seoul 02841, South Korea
[3] Sungkyunkwan Univ, Dept Chem, Suwon 16419, South Korea
[4] Univ Sci & Technol UST, KRICT Sch, Adv Mat & Chem Engn, Daejeon 34114, South Korea
关键词
ATOMIC LAYER DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; MOLYBDENUM NITRIDE; DIFFUSION BARRIER; COMPLEXES; PRECURSORS; PRESSURE; MO; GROWTH; ALLYL;
D O I
10.1021/acs.inorgchem.3c02449
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Mo(II) and W(II) compounds, Mo(eta(3)-allyl)(CO)(2)(Tri-MEDA)Br (1), Mo(eta(3)-allyl)(CO)(2)(TMEDA)Br (2), W(eta(3)-allyl)(CO)(2)(Tri-MEDA)Br (3), and W(eta(3)-allyl)(CO)(2)(TMEDA)Br (4) (Tri-MEDA = N,N,N '-trimethylethylenediamine), were synthesized and characterized. The molecular structures of 1 and 3 were nearly identical with a pseudo-octahedral geometry except for the different Mo and W metal centers. The thermogravimetric analysis of 1 and 3 showed approximately 53 and 64% residues at 550 degrees C, respectively, which were significantly higher than the values for the expected materials. However, 1 and 3 sublimed at 100 degrees C under 0.40 Torr and 120 degrees C under 0.50 Torr, respectively, confirming that they were volatile. For 1 and 3, the temperatures at a vapor pressure of 1 Torr and enthalpies of vaporization (Delta H-vap) were 168.78 degrees C and 143.8 kJ mol(-1), and 167.48 degrees C and 148.5 kJ mol(-1), respectively. The tungsten compound (3) exhibited good durability for 5 weeks under a thermal stability test at a sublimation temperature of 120 degrees C.
引用
收藏
页码:16874 / 16881
页数:8
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