Facile Synthesis of Wafer-Scale Single-Crystal Graphene Film on Atomic Sawtooth Cu Substrate

被引:0
|
作者
Lee, Seungjin [1 ]
Choi, Soo Ho [1 ,2 ]
Ko, Hayoung [1 ]
Kim, Soo Min [3 ]
Kim, Ki Kang [1 ,2 ]
机构
[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea
[2] Inst Basic Sci IBS, Ctr Integrated Nanostruct Phys CINAP, Suwon 16419, South Korea
[3] Sookmyoung Womens Univ, Dept Chem, Seoul 14072, South Korea
来源
基金
新加坡国家研究基金会;
关键词
Two-dimensional materials; Graphene; Chemical vapor deposition; Atomic sawtooth Cu; Single-crystal; VAPOR-DEPOSITION GROWTH; SEEDED GROWTH; LARGE-AREA; COPPER; MONOLAYER; HYDROGEN;
D O I
10.5757/ASCT.2023.32.1.26
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Wafer-scale single-crystal (SC) graphene film is highly required for industrial applications including electronic, photonic, and optoelectronic devices. While SC graphene film has been successfully synthesized on SC Cu (111) or H-Ge (110) substrates, preparation methods of SC growth substrate are still not practical. Here, we report the facile synthesis of wafer-scale SC graphene film on atomic sawtooth Cu substrate by means of chemical vapor deposition. Atomic sawtooth Cu substrates are prepared by melting Cu foils on W foils and solidifying them. The substrates are subsequently employed for synthesis of SC graphene without formation of grain boundaries. The electron diffraction patterns, visualized by transmission electron microscopy, reveal that graphene film has the same lattice orientation over the whole region. Furthermore, Raman mapping measurement demonstrates the homogeneity of the optical property of SC graphene films. Our method provides a new route for the synthesis of SC graphene, as well as other two-dimensional materials.
引用
收藏
页码:26 / 29
页数:4
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