A 142-GHz 4/5 Dual-Modulus Prescaler for Wideband and Low Noise Frequency Synthesizers in 130-nm SiGe:C BiCMOS

被引：3

作者：

Polzin, Lukas ^{[1
]}

van Delden, Marcel ^{[1
]}

Pohl, Nils ^{[2
]}

Rucker, Holger ^{[3
]}

Musch, Thomas ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Inst Elect Circuits, D-44801 Bochum, Germany

[2] Ruhr Univ Bochum, Inst Integrated Syst, D-44801 Bochum, Germany

[3] IHP Leibniz Inst High Performance Microelect, D-15236 Frankfurt, Germany

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 06期

关键词：

Frequency conversion; Frequency measurement; Frequency modulation; Transmission line measurements; Current density; Phase noise; Logic gates; Dual-modulus divider; emitter-coupled logic (ECL); frequency divider; mmWave radar; phase-locked loop (PLL); SiGe heterojunction bipolar transistor (HBT); PHASE-NOISE; CMOS;

D O I：

10.1109/LMWT.2023.3265861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this contribution, the simulation and measurement results of a 4/5 dual-modulus prescaler, operating from dc to 142 GHz with a power consumption of 144 mW, are presented. For a division ratio of 4, the maximum operation frequency of 166 GHz is even higher. The prescaler is the core of a fully programmable dual-modulus frequency divider, which is a crucial component of modern measurement systems. The effect of the physical lengths and the resulting internal delays on the prescaler's performance is analyzed. Furthermore, the voltage level of the fully differential emitter-coupled logic (ECL) is optimized in terms of phase noise and maximum operating frequency. The monolithic microwave integrated circuit (MMIC) is realized in a 130-nm SiGe:C BiCMOS technology with f (T)/f (max) = 470/650 GHz.

引用

页码：867 / 870

页数：4

共 11 条

[1] Design and Phase Noise Measurements of an Ultrafast Dual-Modulus Prescaler in 130 nm SiGe:C BiCMOS
Polzin, Lukas
van Delden, Marcel
Pohl, Nils
Ruecker, Holger
Musch, Thomas
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2023, 72 (01) : 525 - 537
[2] A low-power 17-GHz 256/257 dual-modulus prescaler fabricated in a 130-nm CMOS process
Ding, Y
Kenneth, KO
2005 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2005, : 465 - 468
[3] A Low-Power 255-GHz Single-Stage Frequency Quadrupler in 130-nm SiGe BiCMOS
Steinweg, Luca
Riesb, Vincent
Staerke, Paul
Testa, Paolo Valerio
Carta, Corrado
Ellinger, Frank
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2020, 30 (11) : 1101 - 1104
[4] A Low-Power 255-GHz Single-Stage Frequency Quadrupler in 130-nm SiGe BiCMOS
Steinweg, Luca
Riesb, Vincent
Starke, Paul
Testa, Paolo Valerio
Carta, Corrado
Ellinger, Frank
Steinweg, Luca (luca.steinweg@tu-dresden.de), 1600, Institute of Electrical and Electronics Engineers Inc. (30): : 1101 - 1104
[5] A 44GHz dual-modulus divide-by-4/5 prescaler in 90nm CMOS technology
Lee, Chihun
Cho, Lan-Chou
Liu, Shen-Iuan
PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2006, : 397 - 400
[6] 2 x 4 VGA-Less Bidirectional Dual-Polarization 28 GHz Beamformer in 130-nm SiGe BiCMOS
Franzese, Aniello
Maletic, Nebojsa
Eissa, Mohamed
Negra, Renato
Malignaggi, Andrea
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (08) : 981 - 984
[7] A 140-220-GHz Low-Noise Amplifier With 6-dB Minimum Noise Figure and 80-GHz Bandwidth in 130-nm SiGe BiCMOS
Mehta, Yash
Thomas, Sidharth
Babakhani, Aydin
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2023, 33 (02): : 200 - 203
[8] Low-Voltage Flip-Flop-Based Frequency Divider Up to 92-GHz in 130-nm SiGe BiCMOS Technology
Issakov, Vadim
Trotta, Saverio
Knapp, Herbert
PROCEEDINGS OF 2017 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC 2017), 2017,
[9] 15-GHz-Band Low-Power and Low Phase-Noise LC VCO IC with A Second Harmonic Filter in 130-nm SiGe BiCMOS
Xiao, Xu
Wang, Xinyi
Yoshimasu, Toshihiko
PROCEEDINGS OF THE 2016 IEEE REGION 10 CONFERENCE (TENCON), 2016, : 2525 - 2527
[10] Low Phase Noise 104 GHz Oscillator Using Self-Aligned On-Chip Voltage-Tunable Spherical Dielectric Resonator in 130-nm SiGe BiCMOS
Zhu, Yu
Sterzl, Georg
Hesselbarth, Jan
Meister, Tilo
Ellinger, Frank
2024 IEEE 24TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, SIRF, 2024, : 83 - 86

← 1 2 →