Moire potential renormalization and ultra-flat bands induced by quasiparticle-plasmon coupling

Moire potential profile can form flat electronic bands and manifest correlated states of electrons, where carrier doping is essential for observing those correlations. In this work, we uncover a hidden but remarkable many-electron effect: doped carriers form a two-dimensional plasmon and strongly couple with quasiparticles to renormalize moire potential and realize ultra-flat bands. Using many-body perturbation theory, we demonstrate this effect in twisted MoS2/WS2 heterobilayer. The moire potential is significantly enhanced upon carrier doping, and the bandwidth is reduced by order of magnitude, leading to drastic quenching of electronic kinetic energy and stronger correlation. We further predict that the competition between correlated mechanisms can be effectively controlled via doping, giving hope to a quantum transition between Mott and charge-transfer insulating states. Our work reveals that the potential renormalization effect of doping is much more significant in determining and controlling many-electron electronic correlations than sole filling-factor tuning in semiconducting moire crystals.